IXTK100N65X2 - IXYS XPT™ Series Power MOSFET
650V, 24A, 250mΩ RDS(on) - TO-247-3 Package
Key Specifications
- Part Number: IXTK100N65X2
- Series: XPT™
- Configuration: N-Channel
- Drain-Source Voltage (VDS): 650V
- Continuous Drain Current (ID): 24A
- RDS(on): 250mΩ (max)
- Package: TO-247-3
- Technology: Advanced Trench
- Gate Charge (Qg): 100nC
Product Description
The IXTK100N65X2 is a high-voltage N-Channel MOSFET from IXYS' XPT™ series, utilizing advanced trench technology to deliver optimized performance. With a 650V rating and 24A current capability, this device is ideal for high-voltage SMPS applications requiring excellent efficiency and robustness.
As part of the XPT™ series, the IXTK100N65X2 provides enhanced avalanche ruggedness and optimized gate charge characteristics for switching applications. The device offers a balance of conduction and switching losses, making it suitable for a wide range of power conversion applications.
Applications
- Switch-Mode Power Supplies (SMPS)
- AC-DC Converters
- Power Factor Correction (PFC)
- Uninterruptible Power Supplies (UPS)
- Telecom Power Systems
- Industrial Power Supplies
Key Features
High Voltage Rating
650V capability suitable for universal input applications
Optimized FOM
Excellent figure of merit for efficient power conversion
Enhanced Avalanche
Superior avalanche ruggedness for reliable operation
Trench Technology
Advanced trench design for superior performance
Technical Resources
Ordering Information
| Part Number | Package | Reel Size | MOQ | Price (USD) | Action |
|---|---|---|---|---|---|
| IXTK100N65X2 | TO-247-3 | 50 | 10 | Request Quote | Request Quote |
Need Technical Support?
Our FAE team has extensive experience with IXYS XPT™ series MOSFETs. Contact us for design assistance, thermal analysis, or application guidance for the IXTK100N65X2 in your specific application.
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