IXTK65N65X2 - IXYS XPT™ Series Power MOSFET
650V, 16A, 390mΩ RDS(on) - TO-247-3 Package
Key Specifications
- Part Number: IXTK65N65X2
- Series: XPT™
- Configuration: N-Channel
- Drain-Source Voltage (VDS): 650V
- Continuous Drain Current (ID): 16A
- RDS(on): 390mΩ (max)
- Package: TO-247-3
- Technology: Advanced Trench
- Gate Charge (Qg): 70nC
Product Description
The IXTK65N65X2 is a high-voltage N-Channel MOSFET from IXYS' XPT™ series, utilizing advanced trench technology to deliver optimized performance for power switching applications. With a 650V rating and 16A current capability, this device is ideal for high-voltage applications in power supplies and converters.
As part of the XPT™ series, the IXTK65N65X2 provides enhanced avalanche ruggedness and optimized gate charge characteristics for switching applications. The device offers a balance of conduction and switching losses, making it suitable for a wide range of power conversion applications including switching power supplies and welding equipment.
Applications
- Power Supplies
- Switch-Mode Power Supplies (SMPS)
- Welding Equipment
- Uninterruptible Power Supplies (UPS)
- AC-DC Converters
- Telecom Power Systems
Key Features
High Voltage Rating
650V capability suitable for universal input applications
Optimized FOM
Excellent figure of merit for efficient power conversion
Enhanced Avalanche
Superior avalanche ruggedness for reliable operation
Trench Technology
Advanced trench design for superior performance
Technical Resources
Ordering Information
| Part Number | Package | Reel Size | MOQ | Price (USD) | Action |
|---|---|---|---|---|---|
| IXTK65N65X2 | TO-247-3 | 50 | 10 | Request Quote | Request Quote |
Need Technical Support?
Our FAE team has extensive experience with IXYS XPT™ series MOSFETs. Contact us for design assistance, thermal analysis, or application guidance for the IXTK65N65X2 in your specific application.
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