IXYS20N60C3 - IXYS HiPerFET™ Series Power MOSFET
600V, 20A, 300mΩ RDS(on) - TO-220-3 Package
Key Specifications
- Part Number: IXYS20N60C3
- Series: HiPerFET™
- Configuration: N-Channel
- Drain-Source Voltage (VDS): 600V
- Continuous Drain Current (ID): 20A
- RDS(on): 300mΩ (max)
- Package: TO-220-3
- Technology: Superjunction
- Total Gate Charge (Qg): 42nC
Product Description
The IXYS20N60C3 is a high-voltage N-Channel MOSFET from IXYS' HiPerFET™ series, featuring superjunction technology to achieve ultra-low on-resistance while maintaining high voltage capability. With a 600V rating and 20A current handling capability, this device is optimized for high-power density applications.
As part of the HiPerFET™ series, the IXYS20N60C3 leverages superjunction technology to provide significantly lower RDS(on) compared to conventional MOSFETs at this voltage class. This results in reduced conduction losses and improved efficiency, particularly in high-frequency switching applications.
Applications
- AC-DC Adapters
- Power Adapters
- LED Drivers
- Charger Applications
- Uninterruptible Power Supplies (UPS)
- Telecom Power Systems
Key Features
Superjunction Technology
Ultra-low RDS(on) for high efficiency power conversion
High Power Density
Optimized for compact power supply designs
Low Gate Charge
42nC Qg for efficient high-frequency operation
High Reliability
Robust design for stable operation across temperature range
Technical Resources
Ordering Information
| Part Number | Package | Reel Size | MOQ | Price (USD) | Action |
|---|---|---|---|---|---|
| IXYS20N60C3 | TO-220-3 | 50 | 10 | Request Quote | Request Quote |
Need Technical Support?
Our FAE team has extensive experience with IXYS HiPerFET™ series MOSFETs. Contact us for design assistance, thermal analysis, or application guidance for the IXYS20N60C3 in your specific application.
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